Last edited by Tazragore
Thursday, May 14, 2020 | History

2 edition of SiC-based Schottky diode gas sensors found in the catalog.

SiC-based Schottky diode gas sensors

SiC-based Schottky diode gas sensors

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  • 27 Currently reading

Published by National Aeronautics and Space Administration, Langley Research Center, National Technical Information Service, distributor in Hampton, Va, [Springfield, Va .
Written in English

    Subjects:
  • Silicon carbides.,
  • High temperature gases.,
  • Temperature sensors.,
  • High temperature environments.,
  • Gas detectors.,
  • Schottky diodes.,
  • Semiconductors (Materials)

  • Edition Notes

    Other titlesSiC based Schottky diode gas sensors.
    StatementGary W. Hunter ... [et al.].
    SeriesNASA technical memorandum -- 113159.
    ContributionsHunter, Gary W., Langley Research Center.
    The Physical Object
    FormatMicroform
    Pagination1 v.
    ID Numbers
    Open LibraryOL18133025M

    Abstract: The physics and technology of metal/semiconductor interfaces are key-points in the development of silicon carbide (SiC) based devices. Although in the last decade, the metal to .   Applications of SiC-Based Thin Films in Electronic and MEMS Devices 1. 3,+ OPEN ACCESSBOOKS ,+ INTERNATIONAL AUTHORSAND EDITORS + MILLION DOWNLOADS BOOKS DELIVERED TO COUNTRIES AUTHORSAMONG TOP 1% MOST CITED SCIENTIST % AUTHORSAND EDITORS FROM TOPUNIVERSITIES Selection of our books indexed in the Book .

    Fabrication and electrical and optical characterization of 4H-SiC Schottky UV photodetectors with nickel silicide interdigitated contacts is reported. Dark capacitance and current measurements . Electrical and ultraviolet characterization of 4H-SiC Schottky photodiodes G. Lioliou,1,* M.C. Mazzillo,2 A. Sciuto,3 and A.M. Barnett1 1Dept. Engineering and Design, Sch. of Engineering .

      The Schottky barrier GaN photodetectors were first reported by Khan et al., who demonstrated a Ti Schottky diode on p-type GaN, with a UV/visible ratio of more than two Cited by: FABRICATION AND CHARACTERIZATION OF COMPOUND SEMICONDUCTOR SENSORS FOR PRESSURE, GAS, CHEMICAL, AND BIOMATERIAL SENSING By Byoung Sam Kang .


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SiC-based Schottky diode gas sensors Download PDF EPUB FB2

SiC-based gas sensors with varying sensitivities to different gases. The purpose of this paper is to discuss the SiC-based gas sensing Schottky diode structures under development at NASA File Size: KB. In this paper, high temperature hydrogen gas sensors with GaN and SiC based Schottky diodes were studied using Pd and Pt as Schottky contacts.

Here we investigated thermal stability of Author: F. Ren, J. Kim, B.P. Gila, C.R. Abernathy, S.J. Pearton, A.G. Baca, R.D. Briggs, G.Y. SiC-based Schottky diode gas sensors book. It is concluded that there is considerable versatility in the formation of SiC-based Schottky diode gas sensing structures which will potentially allow the fabrication of a SiC-based gas sensor.

The development of SiC gas sensors at NASA GRC has centered on the development of a stable, gas-sensitive SiC-based Schottky diode.

A Schottky diode is composed of a metal in contact File Size: KB. Silicon carbide based Schottky diode gas sensors are being developed for applications such as emission measurements and leak detection.

The effects of the geometry of the tin oxide film in. COVID Resources. Reliable information about the coronavirus (COVID) is available from the World Health Organization (current situation, international travel).Numerous and frequently.

This paper presents a high-temperature probe suitable for operating in harsh industrial applications as a reliable alternative to low-lifespan conventional solutions, such as Cited by: 3. In this paper, I review my recent results in investigating hydrogen sensors using nitride-based semiconductor diodes, focusing on the interaction mechanism of hydrogen with the devices.

Cited by: SiC-based thin films with variable electrical conductivity, from semiconductor to insulator, have been produced by adjusting only the dopant concentration. This allows the use of these films Cited by: 7.

For instance, Trinchi et al. [, ] have fabricated Pt/β-Ga 2 O 3 /SiC-based Schottky diode gas sensors for H 2. The gas sensing mechanism of these sensors is based on diffusion and Cited by: 2. Hunter GW, Neudeck PG, Chen LY, Knight D, Liu CC, and Wu QH () SiC-Based Schottky Diode Gas : Silicon Carbide, III-Nitrides and Related Materials in Proceedings of Cited by: Summary.

MSiC sensors with different gate materials, Pt-TaSi x O y, porous Pt and Ir, have been investigated as a function of temperature when the ambient was changed between CO and O Cited by: 1.

4H-SiC Schottky Barrier Diodes (SBDs) with remarkable electrical performance have been fabricated and characterised. A barrier height about V and an ideality factor close to 1 are Cited by:   The proposed 4H-SiC-based Schottky diode with − V of reverse bias was exposed to alpha particles with different energies at normal incidence angle to study the Cited by: 4.

This chapter reviews gas-sensitive field-effect transistors (FETs) for gas sensing. Although various types of gas sensors have been reported, this review focuses on FET-based sensors Cited by: 1.

Introduction. With the introduction of the first silicon carbide (SiC) based metal insulator semiconductor (MIS) field effect gas sensor devices in the early s, new possibilities Cited by: Effects of Interfacial Modification in the Devices on Hydrogen Detection Sensitivity.

For GaN Schottky diode-type hydrogen sensors, it was reported that an oxidic intermediate layer Cited by: SiC-based neutron detector in quasi-realistic is a high temperature semiconductor with the potential to meet the gas and temperature sensor needs in both present and future power.

An investigation of the electrical and hydrogen sensing properties of a novel Schottky diode based on a nanostructured lanthanum oxide-molybdenum oxide compound is Cited by: 1. Hydrogen Gas Sensors Fabricated on Atomically Flat 4H-SiC Webbed Cantilevers Conference Paper Materials Science Forum, vol.

pp. ©Trans Tech. Single crystal tin dioxide nanostructures were synthesized to explore and study their capability in form of multi-nanowires sensors. The nanowires of SnO2 have been used to .SiC Schottky Diodes. Advantages of Silicon Carbide Silicon carbide (SiC) is a wide bandgap semiconductor material that enables higher performance power devices compared to .Electronically these sensors can be very simple Schottky diode structures that rely on gas-induced changes in electrical characteristics at the metal-semiconductor interface.

In these .